The invention relates to a method for sintering a semiconductor component (5), which is suitable for power electronics and provided with contact areas, using a low-temperature joining technique. A sintering layer (6) that dissipates heat is arranged under the semiconductor component. The semiconductor component is provided with a further electrically and thermally conductive flat layer (4), to which bonding wires or bonding strips (1a, 1b) are bonded. In the method, the at least one further layer (4) is applied to the contact areas beyond insulating projecting edges (3), and sintering dies act on the applied at least one further layer (4) during sintering.