Invention Application
WO2011126528A1 VIRTUAL SUBSTRATES FOR EPITAXIAL GROWTH AND METHODS OF MAKING THE SAME
审中-公开
用于外源生长的虚拟底物及其制备方法
- Patent Title: VIRTUAL SUBSTRATES FOR EPITAXIAL GROWTH AND METHODS OF MAKING THE SAME
- Patent Title (中): 用于外源生长的虚拟底物及其制备方法
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Application No.: PCT/US2010/061666Application Date: 2010-12-21
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Publication No.: WO2011126528A1Publication Date: 2011-10-13
- Inventor: ATWATER, Harry, A. , LEITE, Marina, S. , WARMANN, Emily, C. , CALLAHAN, Dennis
- Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY , ATWATER, Harry, A. , LEITE, Marina, S. , WARMANN, Emily, C. , CALLAHAN, Dennis
- Applicant Address: 1200 E. California Blvd. Mail Stop 201-85 Pasadena, CA 91125 US
- Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY,ATWATER, Harry, A.,LEITE, Marina, S.,WARMANN, Emily, C.,CALLAHAN, Dennis
- Current Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY,ATWATER, Harry, A.,LEITE, Marina, S.,WARMANN, Emily, C.,CALLAHAN, Dennis
- Current Assignee Address: 1200 E. California Blvd. Mail Stop 201-85 Pasadena, CA 91125 US
- Agency: SCHNEIDER, Lauren, E.
- Priority: US61/322,179 20100408; US61/351,251 20100603
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain- relieved single crystalline layer on a handle support.
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