Invention Application
- Patent Title: GROUP III-NITRIDE N-TYPE DOPING
- Patent Title (中): III类氮化物N型掺杂
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Application No.: PCT/US2011/030603Application Date: 2011-03-30
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Publication No.: WO2011133304A2Publication Date: 2011-10-27
- Inventor: MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
- Applicant: APPLIED MATERIALS, INC. , MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.,MELNIK, Yuriy,KRYLIOUK, Olga,CHEN, Lu,KOJIRI, Hidehiro,TETSUYA, Ishikawa
- Current Assignee: APPLIED MATERIALS, INC.,MELNIK, Yuriy,KRYLIOUK, Olga,CHEN, Lu,KOJIRI, Hidehiro,TETSUYA, Ishikawa
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: VINCENT, Lester, J. et al.
- Priority: US13/071,215 20110324; US61/326,560 20100421
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/205 ; H01L33/32 ; H01L33/34
Abstract:
Group III-nitride N-type doping techniques are described.
Information query
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