公开(公告)号：WO2013117768A1

公开(公告)日：2013-08-15

申请号：PCT/EP2013/052702

申请日：2013-02-11

Applicant: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK

Inventor： CAPELLINI, Giovanni ,  WENGER, Christian ,  SCHRÖDER, Thomas ,  KOZLOWSKI, Grzegorz

IPC: H01L33/34 ,  H01S5/30

CPC classification number: H01S5/3201 ,  H01L33/34 ,  H01S5/021 ,  H01S5/3223

Abstract: A semiconductor light emitter device, comprising a substrate (102), an active layer (108) made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap (106) is arranged on the substrate, which extends between two bridgeposts (104) laterally spaced from each other, the active layer (108) is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer (110), which induces a tensile strain in the active layer above the gap.

Abstract translation: 一种半导体发光器件，包括衬底（102），由锗制成的有源层（108），其被配置为在施加工作电压的情况下向所述半导体发光器件发射光，其中间隙（106）被布置 在衬底上，其在彼此横向间隔开的两个桥接元件（104）之间延伸，有源层（108）布置在桥接元件上并桥接间隙，并且其中半导体发光器件包括应力层（110） 在间隙上方的活性层中引起拉伸应变。

公开(公告)号：WO2013064972A1

公开(公告)日：2013-05-10

申请号：PCT/IB2012/056009

申请日：2012-10-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  IBM JAPAN LIMITED

Inventor： STEINER, Mathias ,  AVOURIS, Phaedon ,  ENGEL, Michael ,  KRUPKE, Ralph ,  FERRARI, Andrea ,  LOMBARDO, Antonio

IPC: H01L31/0248 ,  G02F1/01 ,  H01L31/0232 ,  H01L31/08 ,  H01L33/10 ,  H01L33/34 ,  H01S5/183 ,  H01S5/30

CPC classification number: H01L31/0352 ,  H01L51/0048

Abstract: A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Abstract translation: 微腔控制的二维碳晶格结构器件根据电磁辐射的波长选择性地修改以反射或透射或发射或吸收电磁辐射。 微腔控制的二维碳晶格结构器件采用石墨烯层或至少一个碳纳米管，其位于由部分反射电磁辐射的一对部分反射镜所限定的微腔的光学中心内。 反射镜之间的间距决定了微腔内的电磁辐射的弹性和非弹性散射的效率，因此确定耦合到微腔的电子辐射的共振波长。 通过选择微腔的尺寸和材料参数可以调节共振波长。 制造该器件的方法与标准互补金属氧化物半导体（CMOS）制造工艺兼容。

公开(公告)号：WO2011133304A2

公开(公告)日：2011-10-27

申请号：PCT/US2011/030603

申请日：2011-03-30

Applicant: APPLIED MATERIALS, INC. ,  MELNIK, Yuriy ,  KRYLIOUK, Olga ,  CHEN, Lu ,  KOJIRI, Hidehiro ,  TETSUYA, Ishikawa

Inventor： MELNIK, Yuriy ,  KRYLIOUK, Olga ,  CHEN, Lu ,  KOJIRI, Hidehiro ,  TETSUYA, Ishikawa

IPC: H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01L33/34

CPC classification number: H01L21/2233 ,  C23C16/30 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/007 ,  H01L33/325

Abstract: Group III-nitride N-type doping techniques are described.

Abstract translation: 描述了III族氮化物N型掺杂技术。

公开(公告)号：WO2005062389A3

公开(公告)日：2006-02-09

申请号：PCT/JP2004019457

申请日：2004-12-17

Applicant: MATSUSHITA ELECTRIC IND CO LTD ,  NAGAI HIDEO

Inventor： NAGAI HIDEO

IPC: H01L27/15 ,  H01L33/06 ,  F21K7/00 ,  H01L25/075 ,  H01L33/08 ,  H01L33/10 ,  H01L33/32 ,  H01L33/34 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60

CPC classification number: H01L25/0753 ,  F21K9/00 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30). The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14). Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4). A phosphor film (48) covers the LEDs (6). Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4). The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42). The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).

Abstract translation: 在LED阵列芯片（2）中，LED（6）通过桥接线（30）串联在一起。 LED（6）各自具有包括发光层（14）的半导体多层结构（8-18）。 这里，半导体层叠结构（8-18）外延生长在SiC衬底（4）的前表面上。 荧光膜（48）覆盖LED（6）。 在SiC衬底（4）的后表面上形成两个彼此电独立的电源端子（36和38）。 电源端子（36）通过桥接线（40）和电镀通孔（42）与低电位端的LED（6a）的阴极电极（32）连接。 电源端子（38）通过桥接线（44）和电镀通孔（46）连接到较高电位端的LED（6d）的阳极电极（34）。

公开(公告)号：WO2004075309A2

公开(公告)日：2004-09-02

申请号：PCT/US2004003564

申请日：2004-01-30

Applicant: CREE INC ,  SLATER JR DAVID B ,  HAGLEITNER HELMUT

Inventor： SLATER JR DAVID B ,  HAGLEITNER HELMUT

IPC: H01L21/04 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40 ,  H01L33/50 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L21/0485 ,  H01L33/20 ,  H01L33/34 ,  H01L2224/48091 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Reflective ohmic contacts for n-type silicon carbide include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. A reflector layer is on the layer consisting essentially of nickel, opposite the silicon carbide. A barrier layer is on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer is on the barrier layer opposite the reflector layer. It has been found that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.

Abstract translation: n型碳化硅的反射欧姆接触包括在碳化硅上基本上由镍组成的层。 基本上由镍组成的层被配置为提供与碳化硅的欧姆接触，并且允许通过其从碳化硅出现的光辐射的透射。 反射层位于基本上由与碳化硅相对的镍构成的层上。 阻挡层位于与基本上由镍组成的层相反的反射器层上，并且粘结层位于与反射层相对的阻挡层上。 已经发现，基本上由镍和其上的反射器层组成的层可以为可以具有低欧姆损耗和/或高反射率的碳化硅提供反射欧姆接触。

公开(公告)号：WO0213243A2

公开(公告)日：2002-02-14

申请号：PCT/US0124934

申请日：2001-08-08

Applicant: TRANSLUCENT PHOTONICS INC ,  ATANACKOVIC PETAR B ,  MARSHALL LARRY

Inventor： ATANACKOVIC PETAR B ,  MARSHALL LARRY

IPC: G02B6/122 ,  G02B6/125 ,  H01L27/15 ,  H01L33/34 ,  H01S3/06 ,  H01S3/16 ,  H01S5/183 ,  H01L21/00

CPC classification number: H01L33/34 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/125 ,  H01L27/15 ,  H01S3/0604 ,  H01S3/0627 ,  H01S3/1603 ,  H01S3/1628 ,  H01S5/0261 ,  H01S5/18341 ,  H01S5/18369 ,  H01S2301/173

Abstract: A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that from a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.

Abstract translation: 光子器件包括基于硅半导体的超晶格。 超晶格具有从多个重复单元的多个层。 重复单元中的至少一层是具有至少一种稀土离子的光学活性层。

公开(公告)号：WO01093388A1

公开(公告)日：2001-12-06

申请号：PCT/JP2001/003825

申请日：2001-05-07

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/00 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/34333 ,  H01S5/3434 ,  H01S5/34346

Abstract: A nitride semiconductor light-emitting device characterized in that it includes a light-emitting layer (106) having a multiple quantum well structure where quantum well layers and barrier layers are alternately formed, the composition of the material of the quantum well layer is XN>1-x-y-z x y z 0) where X represents one or more kinds of group III element, and the barrier layers are made of a nitride semiconductor containing at least Al.

Abstract translation: 一种氮化物半导体发光器件，其特征在于，其包括具有量子阱层和阻挡层交替形成的多量子阱结构的发光层（106），量子阱层的材料的组成为XN> 1-xyz x z <（0 0）其中X表示一种或多种III族元素，并且阻挡层由至少包含Al的氮化物半导体制成。

公开(公告)号：WO01048799A1

公开(公告)日：2001-07-05

申请号：PCT/JP2000/009121

申请日：2000-12-21

IPC: H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/34 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/12

Abstract: A first group III nitride compound semiconductor layer (31) is etched by using a mask (4) into islands of dot, stripe, or check pattern so as to form steps. Without removing the mask (4) on the tops of the upper stages of the steps, a second group III compound semiconductor layer (32) that does not epitaxially grow on the mask (4) can be epitaxially grown vertically and horizontally from the sides acting as the nuclei of the growth to fill in the step portions. Any threading dislocation in the group III nitride compound semiconductor layer (31) is suppressed to be propagated into the horizontally epitaxially grown upper portion of the second group III nitride compound semiconductor layer (32), and therefore a region where threading dislocations are few can be formed in the filled step portions.

Abstract translation: 通过使用掩模（4）将第一III族氮化物化合物半导体层（31）蚀刻成点状，条纹状或检查图案的岛状，从而形成台阶。 在不去除台阶上层顶部的掩模（4）的情况下，不会在掩模（4）上外延生长的第二组III化合物半导体层（32）可以从侧面垂直和水平地外延生长 作为生长的核以填充台阶部分。 抑制III族氮化物化合物半导体层（31）中的任何穿透位错被传播到第二III族氮化物化合物半导体层（32）的水平外延生长的上部，因此穿透位错很少的区域可以是 形成在填充步骤部分中。

公开(公告)号：WO01021412A1

公开(公告)日：2001-03-29

申请号：PCT/JP2000/006373

申请日：2000-09-19

IPC: B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08 ,  H01L33/30 ,  H01L33/34 ,  H01L33/44 ,  H01L33/48

CPC classification number: B41J2/45 ,  B41J2002/453 ,  H01L27/153

Abstract: A metal interconnection structure of cross-under interconnection formed on a pnpn structure is provided for prevention of latchup. The structure comprises a lower interconnection provided on the uppermost layer of a pnpn structure isolated insularly by an isolation trench, and an upper interconnection connected with the lower interconnection through a first contact hole made in an insulation film covering the pnpn structure. The upper interconnection is connected with a layer directly under the uppermost layer through a second contact hole made in the insulation film.

Abstract translation: 提供了一种形成在pnpn结构上的横下互连的金属互连结构，用于防止闩锁。 该结构包括设置在通过隔离沟槽隔离隔离的pnpn结构的最上层的下互连，以及通过覆盖pnpn结构的绝缘膜中形成的第一接触孔与下互连连接的上互连。 上部互连通过在绝缘膜中形成的第二接触孔与最上层下方的层连接。

公开(公告)号：WO2022266580A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/072773

申请日：2022-06-06

Applicant: WOLFSPEED, INC.

Inventor： LEONARD, Robert Tyler ,  BALKAS, Elif ,  TSVETKOV, Valeri F. ,  KHLEBNIKOV, Yuri ,  O'HARA, Kathryn A. ,  BUBEL, Simon ,  MALTA, David P.

IPC: C30B23/02 ,  C30B29/36 ,  C30B33/02 ,  H01L33/34

Abstract: Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.