Invention Application
- Patent Title: LOW-TEMPERATURE SYNTHESIS OF SILICA
- Patent Title (中): 二氧化硅的低温合成
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Application No.: PCT/US2011039625Application Date: 2011-06-08
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Publication No.: WO2011156484A3Publication Date: 2012-01-26
- Inventor: AIZENBERG JOANNA , HATTON BENJAMIN
- Applicant: HARVARD COLLEGE , AIZENBERG JOANNA , HATTON BENJAMIN
- Assignee: HARVARD COLLEGE,AIZENBERG JOANNA,HATTON BENJAMIN
- Current Assignee: HARVARD COLLEGE,AIZENBERG JOANNA,HATTON BENJAMIN
- Priority: US35264310 2010-06-08
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/455 ; C23C16/54
Abstract:
An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.
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