Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.