Invention Application
WO2012074619A1 MULTI-DIE INTEGRATED CIRCUIT STRUCTURE WITH UNDERFILL 审中-公开
多层集成电路结构不完整

  • Patent Title: MULTI-DIE INTEGRATED CIRCUIT STRUCTURE WITH UNDERFILL
  • Patent Title (中): 多层集成电路结构不完整
  • Application No.: PCT/US2011/057138
    Application Date: 2011-10-20
  • Publication No.: WO2012074619A1
    Publication Date: 2012-06-07
  • Inventor: RAHMAN, Arifur
  • Applicant: XILINX, INC.
  • Applicant Address: 2100 Logic Drive San Jose, CA 95124 US
  • Assignee: XILINX, INC.
  • Current Assignee: XILINX, INC.
  • Current Assignee Address: 2100 Logic Drive San Jose, CA 95124 US
  • Agency: GEORGE, Thomas et al.
  • Priority: US12/958,309 20101201
  • Main IPC: H01L21/56
  • IPC: H01L21/56 H01L25/065
MULTI-DIE INTEGRATED CIRCUIT STRUCTURE WITH UNDERFILL
Abstract:
In one embodiment, a method of forming a multi-die semiconductor device is provided. A plurality of dice (402 and 404) is mounted on a semiconductor substrate (426), and neighboring ones of the dice are separated by a distance (420) at which a first one of the neighboring dice (404) will contact a meniscus (406) of a flange (416) of the neighboring die during underfill to form a capillary bridge between the neighboring dice (402 and 404). Solder bumps are reflowed to electrically connect contact terminals of the plurality of dice to contact terminals on a top surface of the substrate (512). Underfill is deposited along one or more edges of one or more of the plurality of dice (516). As a result of the capillary bridge formed between neighboring dice, flow of underfill is induced between the bottom surfaces of the neighboring dice and the top surface of the substrate. The dispensed underfill is cured (518).
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