A semiconductor structure is provided. The semiconductor structure comprises: a substrate (1); a gate dielectric layer (20) formed on the substrate; a metal gate electrode layer (30) formed on the gate dielectric layer (20); and at least one metal-containing adjusting layer (43) for adjusting a work function of the semiconductor structure, in which an interfacial layer (10) is formed between the substrate (1) and the gate dielectric layer (20), and an energy of bond between a metal atom in the metal-containing adjusting layer (43) and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer (20) or the interfacial layer (10) and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.