发明申请
WO2013017408A3 GA-ASSISTED GROWTH OF A GAASP NANOSTRUCTURE, GOLD-FREE GAASP NANOSTRUCTURE, AND PHOTOVOLTAIC CELL INCORPORATING SUCH A NANOSTRUCTURE
审中-公开
GA辅助GAASP纳米结构的生长，无金色GAASP纳米结构和纳入这种纳米结构的光电池
- 专利标题： GA-ASSISTED GROWTH OF A GAASP NANOSTRUCTURE, GOLD-FREE GAASP NANOSTRUCTURE, AND PHOTOVOLTAIC CELL INCORPORATING SUCH A NANOSTRUCTURE
- 专利标题（中）： GA辅助GAASP纳米结构的生长，无金色GAASP纳米结构和纳入这种纳米结构的光电池
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申请号： PCT/EP2012064035申请日： 2012-07-17
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公开(公告)号： WO2013017408A3公开(公告)日： 2013-04-25
- 发明人: AAGESEN MARTIN , JOERGENSEN HENRIK INGERSLEV , HOLM JEPPE VILSTRUP , SCHALDEMOSE MORTEN
- 申请人： SUNFLAKE AS , AAGESEN MARTIN , JOERGENSEN HENRIK INGERSLEV , HOLM JEPPE VILSTRUP , SCHALDEMOSE MORTEN
- 专利权人： SUNFLAKE AS,AAGESEN MARTIN,JOERGENSEN HENRIK INGERSLEV,HOLM JEPPE VILSTRUP,SCHALDEMOSE MORTEN
- 当前专利权人： SUNFLAKE AS,AAGESEN MARTIN,JOERGENSEN HENRIK INGERSLEV,HOLM JEPPE VILSTRUP,SCHALDEMOSE MORTEN
- 优先权： GB201113464 2011-08-03
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02 ; H01L29/06 ; H01L31/0352
摘要：
The application discloses a technique for fabricating gallium-arsenide-phosphorous (GaAsP) nanostructures using gallium-assisted (Ga-assisted) Vapour-Liquid-Solid (VLS) growth, i.e. without requiring gold catalyst particles. The resulting Ga-assisted GaAsP nanostructures are free of gold particles, which renders them useful for optoelectronic applications, e.g. as a junction in a solar cell. The Ga-assisted GaAsP nanostructures can be fabricated with a band gap in the range 1.6 to 1.8 eV (e.g. at and around 1.7 eV).
IPC分类:
