Invention Application
WO2013103609A1 ADVANCED PLATFORM FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS
审中-公开
用于过滤晶体硅太阳能电池的先进平台
- Patent Title: ADVANCED PLATFORM FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS
- Patent Title (中): 用于过滤晶体硅太阳能电池的先进平台
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Application No.: PCT/US2012/072272Application Date: 2012-12-31
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Publication No.: WO2013103609A1Publication Date: 2013-07-11
- Inventor: PONNEKANTI, Hari K. , POLYAK, Alexander S. , L'HEUREUX, James , COX, Michael S. , LANE, Christopher T. , HAMMOND, Edward P., IV , MUNGEKAR, Hemant P. , SCHLAEFER, Susanne , BUSCHBECK, Wolfgang , HENRICH, Juergen , LOPP, Andreas
- Applicant: APPLIED MATERIALS, INC. , PONNEKANTI, Hari K. , POLYAK, Alexander S. , L'HEUREUX, James , COX, Michael S. , LANE, Christopher T. , HAMMOND, Edward P., IV , MUNGEKAR, Hemant P. , SCHLAEFER, Susanne , BUSCHBECK, Wolfgang , HENRICH, Juergen , LOPP, Andreas
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.,PONNEKANTI, Hari K.,POLYAK, Alexander S.,L'HEUREUX, James,COX, Michael S.,LANE, Christopher T.,HAMMOND, Edward P., IV,MUNGEKAR, Hemant P.,SCHLAEFER, Susanne,BUSCHBECK, Wolfgang,HENRICH, Juergen,LOPP, Andreas
- Current Assignee: APPLIED MATERIALS, INC.,PONNEKANTI, Hari K.,POLYAK, Alexander S.,L'HEUREUX, James,COX, Michael S.,LANE, Christopher T.,HAMMOND, Edward P., IV,MUNGEKAR, Hemant P.,SCHLAEFER, Susanne,BUSCHBECK, Wolfgang,HENRICH, Juergen,LOPP, Andreas
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: PATTERSON, B. Todd et al.
- Priority: US61/582,698 20120103; US61/596,654 20120208; US61/612,080 20120316; US61/661,313 20120618
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/042 ; H01L31/0216
Abstract:
The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
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