Invention Application
- Patent Title: METHOD FOR PURIFICATION OF SILICON
- Patent Title (中): 硅的净化方法
-
Application No.: PCT/US2013/023215Application Date: 2013-01-25
-
Publication No.: WO2013112884A2Publication Date: 2013-08-01
- Inventor: TURENNE, Alain , SMITH, Dan , DASTGIRI, Damon , KIRSCHT, Fritz G. , TUMMILLO, Anthony , ZHANG, Chunhui , OUNADJELA, Kamel
- Applicant: TURENNE, Alain , SMITH, Dan , DASTGIRI, Damon , KIRSCHT, Fritz G. , TUMMILLO, Anthony , ZHANG, Chunhui , OUNADJELA, Kamel
- Applicant Address: 141 Stirling Ave. North Kitchener, Ontario N2H 3G9 CA
- Assignee: TURENNE, Alain,SMITH, Dan,DASTGIRI, Damon,KIRSCHT, Fritz G.,TUMMILLO, Anthony,ZHANG, Chunhui,OUNADJELA, Kamel
- Current Assignee: TURENNE, Alain,SMITH, Dan,DASTGIRI, Damon,KIRSCHT, Fritz G.,TUMMILLO, Anthony,ZHANG, Chunhui,OUNADJELA, Kamel
- Current Assignee Address: 141 Stirling Ave. North Kitchener, Ontario N2H 3G9 CA
- Agency: MADDEN, Robert B., Reg No. 57,521 et al.
- Priority: US61/591,073 20120126
- Main IPC: C30B29/06
- IPC: C30B29/06
Abstract:
The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.
Information query
IPC分类:
