Invention Application
WO2013163004A1 PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM
审中-公开
PVD AlN薄膜，用于低渗透率硬磁膜的氧气掺杂
- Patent Title: PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM
- Patent Title (中): PVD AlN薄膜，用于低渗透率硬磁膜的氧气掺杂
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Application No.: PCT/US2013/037245Application Date: 2013-04-18
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Publication No.: WO2013163004A1Publication Date: 2013-10-31
- Inventor: CAO, Yong , DAITO, Kazuya , JAKKARAJU, Rajkumar , TANG, Xianmin
- Applicant: APPLIED MATERIALS, INC. , CAO, Yong , DAITO, Kazuya , JAKKARAJU, Rajkumar , TANG, Xianmin
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.,CAO, Yong,DAITO, Kazuya,JAKKARAJU, Rajkumar,TANG, Xianmin
- Current Assignee: APPLIED MATERIALS, INC.,CAO, Yong,DAITO, Kazuya,JAKKARAJU, Rajkumar,TANG, Xianmin
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: PATTERSON, B. Todd et al.
- Priority: US61/637,804 20120424
- Main IPC: H01L21/312
- IPC: H01L21/312 ; H01L21/203
Abstract:
The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.
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