Invention Application
WO2014008111A1 COMPLIANT MONOPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
审中-公开
合适的单极微型器件传输头与硅电极
- Patent Title: COMPLIANT MONOPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
- Patent Title (中): 合适的单极微型器件传输头与硅电极
-
Application No.: PCT/US2013/048365Application Date: 2013-06-27
-
Publication No.: WO2014008111A1Publication Date: 2014-01-09
- Inventor: GOLDA, Dariusz , BIBL, Andreas
- Applicant: LUXVUE TECHNOLOGY CORPORATION
- Applicant Address: 1705 Wyatt Drive Santa Clara, CA 95054 US
- Assignee: LUXVUE TECHNOLOGY CORPORATION
- Current Assignee: LUXVUE TECHNOLOGY CORPORATION
- Current Assignee Address: 1705 Wyatt Drive Santa Clara, CA 95054 US
- Agency: VINCENT, Lester, J. et al.
- Priority: US13/543,684 20120706; US13/543,690 20120706
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/02
Abstract:
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
Information query
IPC分类: