COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES
    2.
    发明申请
    COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES 审中-公开
    合适的双极微型器件传输头与硅电极

    公开(公告)号:WO2014008110A1

    公开(公告)日:2014-01-09

    申请号:PCT/US2013/048364

    申请日:2013-06-27

    CPC classification number: B81C99/002

    Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

    Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中,柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    5.
    发明申请
    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 审中-公开
    微电极传输头与硅电极

    公开(公告)号:WO2013176963A1

    公开(公告)日:2013-11-28

    申请号:PCT/US2013/041441

    申请日:2013-05-16

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中,微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

    COMPLIANT MONOPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    8.
    发明申请
    COMPLIANT MONOPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 审中-公开
    合适的单极微型器件传输头与硅电极

    公开(公告)号:WO2014008111A1

    公开(公告)日:2014-01-09

    申请号:PCT/US2013/048365

    申请日:2013-06-27

    Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中,微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构,并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

    METHOD OF FORMING A MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    9.
    发明申请
    METHOD OF FORMING A MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 审中-公开
    用硅电极形成微器件传输头的方法

    公开(公告)号:WO2013176964A1

    公开(公告)日:2013-11-28

    申请号:PCT/US2013/041444

    申请日:2013-05-16

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中,微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

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