Invention Application
WO2014158462A1 LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS THROUGH CYCLICAL SILYLATION
审中-公开
通过循环硅酸化沉积碳化硅氧烷膜的层间层
- Patent Title: LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS THROUGH CYCLICAL SILYLATION
- Patent Title (中): 通过循环硅酸化沉积碳化硅氧烷膜的层间层
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Application No.: PCT/US2014/016944Application Date: 2014-02-18
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Publication No.: WO2014158462A1Publication Date: 2014-10-02
- Inventor: CHAN, Kelvin
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Agency: PATTERSON, B. Todd et al.
- Priority: US61/784,013 20130314
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Embodiments of the present invention generally relate to methods of forming carbon-doped oxide films. The methods generally include generating hydroxyl groups on a surface of the substrate using a plasma, and then performing silylation on the surface of the substrate. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma in order to perform an additional silylation. Multiple plasma treatments and silylations may be performed to deposit a layer having a desired thickness.
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