公开(公告)号：WO2022177704A1

公开(公告)日：2022-08-25

申请号：PCT/US2022/013646

申请日：2022-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  CHAN, Kelvin ,  SALY, Mark, Joseph

IPC: G03F7/16 ,  G03F7/004

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using chemical vapor condensation deposition processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber from an ampoule maintained at a first temperature. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. The photoresist layer is a metal oxo containing material. The substrate is maintained at a second temperature less than the first temperature during the formation of the photoresist layer on the surface of the substrate.

公开(公告)号：WO2021183621A1

公开(公告)日：2021-09-16

申请号：PCT/US2021/021668

申请日：2021-03-10

Applicant: APPLIED MATERIALS, INC.

Inventor： MEBARKI, Bencherki ,  LEE, Joung Jee ,  XU, Yi ,  LEI, Yu ,  TANG, Xianmin ,  CHAN, Kelvin ,  JANSEN, Alexander ,  KRAUS, Philip A.

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：WO2017048911A1

公开(公告)日：2017-03-23

申请号：PCT/US2016/051868

申请日：2016-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAN, Kelvin ,  CHEN, Yihong ,  MALLICK, Abhijit Basu

IPC: H01L21/02 ,  H01L21/205 ,  H01L21/28

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/28562 ,  H01L21/306 ,  H01L21/32 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.

Abstract translation: 公开了通过原子层沉积来选择性沉积膜的方法。 通过氢化硅烷化钝化底物表面以防止沉积并允许在未钝化的表面上进行选择性沉积。

公开(公告)号：WO2014011364A1

公开(公告)日：2014-01-16

申请号：PCT/US2013/046285

申请日：2013-06-18

Applicant: APPLIED MATERIALS, INC. ,  CHAN, Kelvin ,  XU, Jin ,  YIM, Kang Sub ,  DEMOS, Alexandros T.

Inventor： CHAN, Kelvin ,  XU, Jin ,  YIM, Kang Sub ,  DEMOS, Alexandros T.

IPC: H01L21/31

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si-OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：WO2012148641A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/032203

申请日：2012-04-04

Applicant: APPLIED MATERIALS, INC. ,  XIE, Bo ,  DEMOS, Alexandros T. ,  YIM, Kang Sub ,  NOWAK, Thomas ,  CHAN, Kelvin

Inventor： XIE, Bo ,  DEMOS, Alexandros T. ,  YIM, Kang Sub ,  NOWAK, Thomas ,  CHAN, Kelvin

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：WO2022132506A1

公开(公告)日：2022-06-23

申请号：PCT/US2021/062228

申请日：2021-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  SALY, Mark, Joseph ,  HAO, Ruiying ,  FRENCH, Wayne ,  CHAN, Kelvin

IPC: G03F7/16 ,  G03F7/004

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

公开(公告)号：WO2022108773A1

公开(公告)日：2022-05-27

申请号：PCT/US2021/058317

申请日：2021-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： HOUSHMAND, Farzad ,  FRENCH, Wayne ,  SUBRAMANI, Anantha ,  CHAN, Kelvin ,  KALUTARAGE, Lakmal, Charidu ,  SALY, Mark, Joseph

IPC: G03F7/16 ,  H01L21/027

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：WO2018005376A1

公开(公告)日：2018-01-04

申请号：PCT/US2017/039317

申请日：2017-06-26

Applicant: APPLIED MATERIALS, INC.

Inventor： SINGHA ROY, Susmit ,  CHAN, Kelvin ,  LE, Hien Minh ,  KAMATH, Sanjay ,  MALLICK, Abhijit Basu ,  GANDIKOTA, Srinivas ,  JANAKIRAMAN, Karthik

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/324 ,  H01L27/11551

CPC classification number: H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer, in one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases, in another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process, in another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

Abstract translation: 本文描述的实施方式总体上涉及用于形成金属层的方法和用于在金属层上形成氧化物层的方法，在一种实施方式中，金属层形成在种子层上，并且 种子层有助于金属层中的金属以小粒径成核而不影响金属层的导电性。 可以使用等离子体增强化学气相沉积（PECVD）形成金属层，并且氮气可以与前体气体一起流入处理室中。在另一种实施方式中，在金属层上形成阻挡层以防止金属 层在随后的氧化物层沉积过程期间被氧化，在另一实施方式中，在沉积氧化物层之前处理金属层以防止金属层被氧化。

公开(公告)号：WO2017070634A1

公开(公告)日：2017-04-27

申请号：PCT/US2016/058346

申请日：2016-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAN, Kelvin ,  CHEN, Yihong

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/205

CPC classification number: H01L21/68771 ,  C23C16/00 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/68764

Abstract: Methods for depositing a film comprising cyclical exposure of a substrate surface to a silicon precursor to form a nucleation layer and sequential exposure to a metal precursor and a reductant to form a metal layer on the nucleation layer.

Abstract translation: 用于沉积膜的方法包括将衬底表面循环暴露于硅前体以形成成核层并且依次暴露于金属前体和还原剂以在成核层上形成金属层。 / p>

公开(公告)号：WO2016130238A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/012146

申请日：2016-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Yihong ,  CHAN, Kelvin ,  MUKHERJEE, Shaunak ,  MALLICK, Abhijit Basu

IPC: H01L21/205 ,  H01L21/027

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract translation: 本文公开的实施方式通常涉及形成氧化硅膜的方法。 所述方法可以包括在具有末端羟基的基材的表面上进行甲硅烷基化。 然后使用等离子体和H 2 O浸泡再生衬底表面上的羟基以进行另外的甲硅烷基化。 其它方法包括使用路易斯酸催化暴露的表面，定向灭活暴露的第一和第二表面以及在侧壁表面上沉积含硅层。 可以进行多次等离子体处理以沉积具有所需厚度的层。