Invention Application
- Patent Title: PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH
- Patent Title (中): 光电半导体开关
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Application No.: PCT/US2014/025199Application Date: 2014-03-13
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Publication No.: WO2014159804A2Publication Date: 2014-10-02
- Inventor: BHATTACHARYA, Rabi, S. , EVAN, Howard, Blane
- Applicant: UES, INC. , BHATTACHARYA, Rabi, S. , EVAN, Howard, Blane
- Applicant Address: 4401 Dayton-xenia Road Dayton, OH 45432 US
- Assignee: UES, INC.,BHATTACHARYA, Rabi, S.,EVAN, Howard, Blane
- Current Assignee: UES, INC.,BHATTACHARYA, Rabi, S.,EVAN, Howard, Blane
- Current Assignee Address: 4401 Dayton-xenia Road Dayton, OH 45432 US
- Agency: LEVY, Mark, P. et al.
- Priority: US61/781,095 20130314; US14/202,307 20140310
- Main IPC: H01L31/09
- IPC: H01L31/09 ; H01L31/0304
Abstract:
A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels.
Information query
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