Invention Application
- Patent Title: ELECTROSTATIC DISCHARGE DIODE
- Patent Title (中): 静电放电二极管
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Application No.: PCT/US2014/035076Application Date: 2014-04-23
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Publication No.: WO2014182449A1Publication Date: 2014-11-13
- Inventor: RAMACHANDRAN, Vidhya , HENDERSON, Brian M. , GU, Shiqun , TAN, Chiew-Guan , KIM, Jung Pill , KIM, Taehyun
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Agency: TOLER, JEFFREY G.
- Priority: US13/887,723 20130506
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/48 ; H01L23/60 ; H01L25/065 ; H01L27/02
Abstract:
A method includes thinning a back-side of a substrate to expose a portion of a first via that is formed in the substrate. The method also includes forming a first diode at the back-side of the substrate. The first diode is coupled to the first via.
Information query
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