Invention Application
- Patent Title: METHOD, APPARATUS AND SUBSTRATES FOR LITHOGRAPHIC METROLOGY
- Patent Title (中): 方法,装置和基板用于岩石计量学
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Application No.: PCT/EP2014/073701Application Date: 2014-11-04
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Publication No.: WO2015078669A1Publication Date: 2015-06-04
- Inventor: SMILDE, Hendrik, Jan, Hidde , DEN BOEF, Arie, Jeffrey , ADAM, Omer, Abubaker, Omer , JAK, Martin, Jacobus, Johan
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: P.O. Box 324 NL-5500 AH Veldhoven NL
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: P.O. Box 324 NL-5500 AH Veldhoven NL
- Agency: BROEKEN, Petrus
- Priority: EP13194522.2 20131126
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non- linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.
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