公开(公告)号：WO2015018625A1

公开(公告)日：2015-02-12

申请号：PCT/EP2014/065461

申请日：2014-07-18

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott, Anderson ,  GEYPEN, Niels ,  SMILDE, Hendrik, Jan, Hidde ,  STRAAIJER, Alexander ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Abstract translation: 公开了一种测量光刻工艺参数的方法和相关检验装置。 该方法包括使用多个不同的照明条件在衬底上测量至少两个目标结构，所述目标结构具有故意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意覆盖偏移引起的贡献，（ii）在形成目标结构期间的覆盖误差和（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。

公开(公告)号：WO2016030255A3

公开(公告)日：2016-03-03

申请号：PCT/EP2015/069062

申请日：2015-08-19

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  FOUQUET, Christophe, David ,  SMILDE, Hendrik, Jan, Hidde ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing Lan ,  BELTMAN, Johannes, Marcus, Maria ,  FUCHS, Andreas ,  ADAM, Omer, Abubaker, Omer ,  KUBIS, Michael ,  JAK, Martin, Jacobus, Johan

IPC: G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标均包括一对周期性结构，以及 第一子目标具有与第二子目标不同的设计，包括第一子目标周期性结构的不同设计具有与第二子目标周期性结构不同的间距，特征宽度，空间宽度和/或分段 或（2）第一和第二子目标分别在第一层中包括第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下的第二层中的第一周期性结构的下方，并且存在 在第二层中的第二周期性结构下方没有周期性结构，并且第四周期性结构至少部分地位于第二层下方的第三层中的第二周期性结构下方。 一种设计这种测量目标的方法涉及在辅助目标的外围定位辅助特征，辅助特征被配置为减少在辅助目标的外围处测量的强度峰值。

公开(公告)号：WO2015124397A1

公开(公告)日：2015-08-27

申请号：PCT/EP2015/051796

申请日：2015-01-29

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN BUEL, Henricus, Wilhelmus, Maria ,  BELTMAN, Johannes, Marcus, Maria ,  LIU, Xing, Lan ,  SMILDE, Hendrik, Jan, Hidde ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20 ,  G01N21/93 ,  G01N21/956

CPC classification number: G03F7/70683 ,  G01N21/93 ,  G01N21/956 ,  G03F7/70633

Abstract: Disclosed is a method of devising a target arrangement, and associated target and reticle. The target comprises a plurality of gratings, each grating comprising a plurality of substructures. The method comprises the steps of: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may comprise an optimization process comprising modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.

Abstract translation: 公开了一种设计目标布置以及相关联的目标和掩模版的方法。 目标包括多个光栅，每个光栅包括多个子结构。 该方法包括以下步骤：定义目标区域; 将子结构定位在目标区域内以形成光栅; 以及将辅助特征定位在所述光栅的周边处，所述辅助特征被配置为减少在所述光栅周边处的测量的强度峰值。 该方法可以包括优化过程，其包括使用计量过程建模通过检查目标而获得的合成图像; 并且使用计量过程评估目标布置是否被优化用于检测。

公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

公开(公告)号：WO2015113724A1

公开(公告)日：2015-08-06

申请号：PCT/EP2014/079443

申请日：2014-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SMILDE, Hendrik, Jan, Hidde ,  AUER, Bastiaan, Onne, Fagginger ,  HARUTYUNYAN, Davit ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01B9/04 ,  G01B2210/56 ,  G01N2021/8822 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092

Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Abstract translation: 在使用小目标的暗场测量方法中，通过将组合拟合函数拟合到测量图像来确定使用单个衍射级获得的目标图像的特性。 组合拟合功能包括用于表示物理传感器和目标的方面的术语。 基于测量过程和/或目标的参数来确定组合拟合函数的一些系数。 在一个实施例中，组合拟合功能包括表示成像系统中瞳孔停止点的点扩展函数的jinc函数。

公开(公告)号：WO2020035275A1

公开(公告)日：2020-02-20

申请号：PCT/EP2019/069956

申请日：2019-07-24

Applicant: ASML NETHERLANDS B.V.

Inventor： MOSSAVAT, Seyed Iman ,  DIRKS, Remco ,  SMILDE, Hendrik, Jan, Hidde

IPC: G03F7/20

Abstract: A method of determining an estimated intensity of radiation scattered by a target illuminated by a radiation source, has the following steps: obtaining and training (402) a library REFLIB of wavelength- dependent reflectivity as a function of the wavelength, target structural parameters and angle of incidence R(λ,θ,x,y); determining (408) a wide-band library (W-BLIB) of integrals of wavelength-dependent reflectivity R of the target in a Jones framework over a range of radiation source wavelengths λ; training (TRN) (410) the wide-band library; and determining (412), using the trained wide-band library, an estimated intensity (INT) of radiation scattered by the target illuminated by the radiation source.

公开(公告)号：WO2017029110A1

公开(公告)日：2017-02-23

申请号：PCT/EP2016/068426

申请日：2016-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： JAK, Martin, Jacobus, Johan ,  SMILDE, Hendrik, Jan, Hidde ,  HUANG, Te-Chih ,  CALADO, Victor, Emanuel ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应叠加光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。

公开(公告)号：WO2015078669A1

公开(公告)日：2015-06-04

申请号：PCT/EP2014/073701

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： SMILDE, Hendrik, Jan, Hidde ,  DEN BOEF, Arie, Jeffrey ,  ADAM, Omer, Abubaker, Omer ,  JAK, Martin, Jacobus, Johan

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non- linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

Abstract translation: 衬底具有通过光刻工艺在其上形成的三个或更多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识和叠加和目标不对称之间的假设非线性关系，对光栅的不对称测量计算叠加，从而校正特征不对称性。 零偏置区域和P / 2区域的周期关系具有相反的梯度。 该计算允许所述梯度具有不同的幅度以及相反的符号。 该计算还提供了有关特征不对称性和其他处理效果的信息。 该信息用于改进随后的测量过程和/或光刻过程的性能。

公开(公告)号：WO2020088906A1

公开(公告)日：2020-05-07

申请号：PCT/EP2019/077463

申请日：2019-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  BOS, Hilko, Dirk ,  SMILDE, Hendrik, Jan, Hidde ,  HAJIAHMADI, Mohammadreza ,  MACHT, Lukasz, Jerzy ,  VAN DEN BOS, Karel, Hendrik, Wouter ,  SOKOLOV, Sergei ,  KUNNEMAN, Lucas, Tijn

IPC: G03F7/20 ,  G01N21/47 ,  H01L21/66

Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.

公开(公告)号：WO2016124393A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/051007

申请日：2016-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xing Lan ,  SMILDE, Hendrik, Jan, Hidde ,  PENG, Yue-Lin ,  CEKLI, Hakki, Ergun ,  PELLO, Josselin ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Abstract translation: 公开了一种测量光刻工艺参数的方法，以及相关联的计算机程序和设备。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性由于第一和第二结构的未对准而包括覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与每个目标结构的至少第一结构中的结构不对称有关的结构不对称特征，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称的覆盖贡献。