Invention Application
- Patent Title: PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
- Patent Title (中): 无机薄膜生成工艺
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Application No.: PCT/EP2015/051181Application Date: 2015-01-22
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Publication No.: WO2015110492A1Publication Date: 2015-07-30
- Inventor: XU, Ke , SCHILDKNECHT, Christian , SPIELMANN, Jan , FRANK, Jürgen , BLASBERG, Florian , GÄRTNER, Martin , LÖFFLER, Daniel , WEIGUNY, Sabine , SCHIERLE-ARNDT, Kerstin
- Applicant: BASF SE
- Applicant Address: 67056 Ludwigshafen DE
- Assignee: BASF SE
- Current Assignee: BASF SE
- Current Assignee Address: 67056 Ludwigshafen DE
- Agency: BASF SE
- Priority: EP14152683.0 20140127
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C07F3/00
Abstract:
The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R 1 , R 2 , R 3 , R 4 ,R 5 , and R 6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.
Information query
IPC分类:
