METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Invention Application

WO2016016761A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

Title translation: 制造半导体器件的方法

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Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Patent Title (中): 制造半导体器件的方法
Application No.: PCT/IB2015/055414

Application Date: 2015-07-17
Publication No.: WO2016016761A1

Publication Date: 2016-02-04
Inventor: NAGAMATSU, Sho , MORIWAKA, Tomoaki
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Applicant Address: 398, Hase Atsugi-shi, Kanagawa 2430036 JP
Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Current Assignee Address: 398, Hase Atsugi-shi, Kanagawa 2430036 JP
Priority: JP2014-156746 20140731
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L27/08 ; H01L27/088 ; H01L27/092 ; H01L29/786

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract:

A first conductor is formed over a substrate. A first insulator is formed over the first conductor. A second insulator including aluminum oxide is formed over the first insulator. A third insulator is formed in contact with a top surface of the second insulator. A first opening portion reaching the first conductor is provided in the first to third insulators. A second conductor is formed over the third insulator and in the first opening portion. A third conductor is formed in the first opening portion by removing part of the second conductor over the third insulator so that a surface of the third conductor is parallel to a bottom surface of the substrate. A first transistor including an oxide semiconductor is formed over the third insulator.

Abstract(Chinese):

第一导体形成在衬底上。在第一导体上形成第一绝缘体。在第一绝缘体上形成包括氧化铝的第二绝缘体。第三绝缘体形成为与第二绝缘体的顶表面接触。到达第一导体的第一开口部分设置在第一至第三绝缘体中。第二导体形成在第三绝缘体上并且在第一开口部分中。第三导体通过在第三绝缘体上除去第二导体的一部分而形成在第一开口部分中，使得第三导体的表面平行于衬底的底表面。包括氧化物半导体的第一晶体管形成在第三绝缘体上。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺