An integrated circuit (IC) device includes a first nanowire GAA active transistor (810) of a first-type (N-Type) in a first-type region. The first active transistor may have a first-type work function material (824, NWFM) and a low channel dopant concentration in an active portion. The integrated circuit also includes a second nanowire GAA active transistor (810), using the same nanowire channel as the first active transistor. The IC device furthermore includes a first isolation transistor (TIE-OFF 840) of the first-type in the first- type region, sharing the nanowires of the first and second active nanowire GAA transistors. The first isolation transistor (TIE-OFF 840) is arranged between the first and second active transistors and has a workfunction (832 PWFM) opposite to that of the active transistors on the same nanowire. Further active transistors (P-type) may be arranged using parallel nanowires and may have a second-type work function material (834).