Invention Application
WO2016171920A1 HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY
审中-公开
用于磁性随机存取存储器的高退火温度均匀磁性异相结构
- Patent Title: HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY
- Patent Title (中): 用于磁性随机存取存储器的高退火温度均匀磁性异相结构
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Application No.: PCT/US2016/026473Application Date: 2016-04-07
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Publication No.: WO2016171920A1Publication Date: 2016-10-27
- Inventor: KARDASZ, Bartlomiej Adam , PINARBASI, Mustafa Michael , HERNANDEZ, Jacob Anthony
- Applicant: SPIN TRANSFER TECHNOLOGIES, INC.
- Applicant Address: 45500 Northport Loop West Fremont, California 94538 US
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: 45500 Northport Loop West Fremont, California 94538 US
- Agency: MILLER, Jeffrey A.
- Priority: US62/150,785 20150421; US15/091,853 20160406
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/10 ; H01L43/12
Abstract:
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.
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