中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.011 seconds)

    PRECESSIONAL SPIN CURRENT STRUCTURE FOR MRAM
    2.
    发明申请
    PRECESSIONAL SPIN CURRENT STRUCTURE FOR MRAM 审中-公开
    MRAM的主要旋转电流结构

    公开(公告)号：WO2016204835A1

    公开(公告)日：2016-12-22

    申请号：PCT/US2016/021691

    申请日：2016-03-10

    Applicant: SPIN TRANSFER TECHNOLOGIES, INC.

    Inventor： PINARBASI, Mustafa Michael ,  TZOUFRAS, Michail

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/10

    Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

    Abstract translation: 公开了一种磁阻随机存取存储器（MRAM）。 MRAM器件具有磁隧道结叠层，其具有磁隧道结结构中的自由层的显着改善的性能。 MRAM装置利用一个旋转自旋电流（PSC）磁性层与垂直的MTJ结合，其中PSC磁性层的面内磁化方向自由旋转。

    POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEMENTS
    5.
    发明申请
    POLISHING STOP LAYER(S) FOR PROCESSING ARRAYS OF SEMICONDUCTOR ELEMENTS 审中-公开
    抛光停止层（S）用于处理半导体元件阵列

    公开(公告)号：WO2017019134A1

    公开(公告)日：2017-02-02

    申请号：PCT/US2016/027445

    申请日：2016-04-14

    Applicant: SPIN TRANSFER TECHNOLOGIES, INC.

    Inventor： PINARBASI, Mustafa Michael ,  HERNANDEZ, Jacob Anthony ,  DATTA, Arindom ,  GAJEK, Marcin Jan ,  ZANTYE, Parshuram Balkrishna

    IPC: H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  B24B37/22 ,  B24B37/24

    CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    Abstract: Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

    Abstract translation: 描述的实施例可以用于半导体制造并且使用具有高和低抛光速率的材料来帮助确定在整个晶片上是一致的精确抛光终点并且可以在破坏半导体元件之前停止抛光。 半导体元件之间的低抛光速率材料的高度被用作抛光终点。 由于低抛光速率材料会降低抛光过程，因此很容易确定终点并避免损坏半导体元件。 额外的或替代的蚀刻终点可以是薄的材料层，当已经暴露时提供非常清楚的光谱信号，允许蚀刻过程停止。

    SPIN TRANSFER TORQUE STRUCTURE FOR MRAM DEVICES HAVING A SPIN CURRENT INJECTION CAPPING LAYER
    6.
    发明申请
    SPIN TRANSFER TORQUE STRUCTURE FOR MRAM DEVICES HAVING A SPIN CURRENT INJECTION CAPPING LAYER 审中-公开
    具有旋转电流注入层的MRAM器件的转子转矩结构

    公开(公告)号：WO2016171800A1

    公开(公告)日：2016-10-27

    申请号：PCT/US2016/021324

    申请日：2016-03-08

    Applicant: SPIN TRANSFER TECHNOLOGIES, INC.

    Inventor： KARDASZ, Bartlomiej Adam ,  PINARBASI, Mustafa Michael

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/161

    Abstract: A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.

    Abstract translation: 公开了一种磁阻随机存取存储器（MRAM）装置。 本文所述的器件在磁性隧道结的自由层和正交偏振器层之间具有自旋电流注入覆盖层。 自旋电流注入封盖层通过从偏振器注入非常有效的自旋电流使自旋转矩最大化。 自旋电流注入覆盖层可以由MgO层和铁磁材料层组成。

    MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION AND THERMAL STABILITY ENHANCEMENT LAYER
    7.
    发明申请
    MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION AND THERMAL STABILITY ENHANCEMENT LAYER 审中-公开
    具有磁性隧道接合和热稳定性增强层的存储器单元

    公开(公告)号：WO2017131894A1

    公开(公告)日：2017-08-03

    申请号：PCT/US2016/067444

    申请日：2016-12-19

    Applicant: SPIN TRANSFER TECHNOLOGIES, INC.

    Inventor： PINARBASI, Mustafa Michael ,  KARDASZ, Bartlomiej Adam

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.

    Abstract translation: 公开了一种磁阻随机存取存储器（MRAM）器件。 本文所述的器件在磁隧道结的自由层上具有热稳定性增强层。 热稳定增强层提高了自由层的热稳定性，增加了自由层的磁矩，同时也不会导致自由层的磁性方向处于平面状态。 热稳定性增强层可以由一层CoFeB铁磁材料构成。

    HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY
    8.
    发明申请
    HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    用于磁性随机存取存储器的高退火温度均匀磁性异相结构

    公开(公告)号：WO2016171920A1

    公开(公告)日：2016-10-27

    申请号：PCT/US2016/026473

    申请日：2016-04-07

    Applicant: SPIN TRANSFER TECHNOLOGIES, INC.

    Inventor： KARDASZ, Bartlomiej Adam ,  PINARBASI, Mustafa Michael ,  HERNANDEZ, Jacob Anthony

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

    Abstract: A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.

    Abstract translation: 公开了一种垂直合成反铁磁（pSAF）结构及其制造方法。 pSAF结构包括由薄的钌层分离的第一高垂直磁各向异性（PMA）多层和第二高PMA层。 每个PMA层由第一钴层和由镍/钴多层隔开的第二钴层组成。 在沉积第一和第二PMA层和钌交换耦合层中的每一个之后，所得结构经历高温退火步骤，这导致第一和第二PMA层中的每一个具有垂直的磁各向异性。

Patent Agency Ranking