Invention Application
WO2016178991A1 METHODS FOR DEPOSITING LOW K AND LOW WET ETCH RATE DIELECTRIC THIN FILMS
审中-公开
沉积低K和低湿蚀刻速率电介质薄膜的方法
- Patent Title: METHODS FOR DEPOSITING LOW K AND LOW WET ETCH RATE DIELECTRIC THIN FILMS
- Patent Title (中): 沉积低K和低湿蚀刻速率电介质薄膜的方法
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Application No.: PCT/US2016/030095Application Date: 2016-04-29
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Publication No.: WO2016178991A1Publication Date: 2016-11-10
- Inventor: LI, Ning , SALY, Mark , THOMPSON, David , BALSEANU, Mihaela , XIA, Li-Qun
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: BLANKMAN, Jeffrey I.
- Priority: US62/156,257 20150502
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/306
Abstract:
Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
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