公开(公告)号：WO2023076116A1

公开(公告)日：2023-05-04

申请号：PCT/US2022/047398

申请日：2022-10-21

Applicant: APPLIED MATERIALS, INC.

Inventor： MCSWINEY, Michael L. ,  BHUYAN, Bhaskar Jyoti ,  SALY, Mark ,  PHILLIPS, Drew ,  DANGERFIELD, Aaron ,  THOMPSON, David ,  KASHEFI, Kevin ,  XIE, Xiangjin

IPC: H01L21/768 ,  B05D1/00 ,  B05D3/02 ,  H01L21/285

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：WO2023049159A1

公开(公告)日：2023-03-30

申请号：PCT/US2022/044215

申请日：2022-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： WONG, Kwok Feng ,  RAMADAS, Rakesh ,  AGARWAL, Ashutosh

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  C23C16/455 ,  C23C16/458

Abstract: Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

公开(公告)号：WO2022232502A1

公开(公告)日：2022-11-03

申请号：PCT/US2022/026918

申请日：2022-04-29

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Xiaopu ,  KUDELA, Jozef ,  BERA, Kallol ,  TANAKA, Tsutomu ,  DZILNO, Dmitry A.

IPC: H01J37/32

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

公开(公告)号：WO2022232224A1

公开(公告)日：2022-11-03

申请号：PCT/US2022/026465

申请日：2022-04-27

Applicant: APPLIED MATERIALS, INC.

Inventor： SUBRAHMANYAN, Pradeep K. ,  KANG, Sean S. ,  VARGHESE, Sony

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/66 ,  H01L21/3115 ,  H01L21/67

Abstract: Provided are methods of reducing the stress of a semiconductor wafer. A wafer map of a free-standing wafer is created using metrology tools. The wafer map is then converted into a power spectral density (PSD) using a spatial frequency scale. The fundamental component of bow is then compensated with a uniform film, e.g., silicon nitride (SiN), deposited on the back side of the wafer.

公开(公告)号：WO2022216773A1

公开(公告)日：2022-10-13

申请号：PCT/US2022/023591

申请日：2022-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： KASHYAP, Dhritiman Subha ,  WANG, Chaowei ,  SHAH, Kartik ,  GRIFFIN, Kevin ,  RAMANATHAN, Karthik ,  CHEN, Hanhong ,  AUBUCHON, Joseph ,  BALUJA, Sanjeev

IPC: C23C16/52 ,  C23C16/455 ,  G06N20/00

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：WO2022187343A1

公开(公告)日：2022-09-09

申请号：PCT/US2022/018493

申请日：2022-03-02

Applicant: APPLIED MATERIALS, INC.

Inventor： FREITAS, Marcus Blake ,  ISHIKAWA, David Masayuki ,  PARKHE, Vijay D. ,  SIVARAMAKRISHNAN, Visweswaren

IPC: H01L21/687 ,  H01L21/67 ,  G01K11/32

Abstract: Apparatus and systems for temperature probe integration on pedestal heaters of a processing chamber including a cooling assembly for cooling temperature probes disposed within. Cooling assemblies can be actively water-cooled, passively cooled by fin stacks. Further cooling assemblies include a mechanical arm assembly for lowering or raising the temperature probes.

公开(公告)号：WO2022147069A1

公开(公告)日：2022-07-07

申请号：PCT/US2021/065433

申请日：2021-12-29

Applicant: APPLIED MATERIALS, INC.

Inventor： MUNGAI, Francis Kanyiri ,  VENKATAGIRIYAPPA, Vijayabhaskara ,  HSU, Yung-Cheng ,  TANAKA, Keiichi ,  SILVETTI, Mario D. ,  BALSEANU, Mihaela A.

IPC: C23C4/067 ,  C23C14/06 ,  C23C16/455 ,  C23C14/50 ,  C23C16/458

Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

公开(公告)号：WO2022140263A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/064362

申请日：2021-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TANAKA, Tsutomu ,  LEE, Jared Ahmad ,  RAMADAS, Rakesh ,  DZILNO, Dmitry A. ,  WILSON, Gregory J. ,  SRINIVASAN, Sriharish

IPC: H01J37/32

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

公开(公告)号：WO2022051377A1

公开(公告)日：2022-03-10

申请号：PCT/US2021/048685

申请日：2021-09-01

Applicant: APPLIED MATERIALS, INC.

Inventor： GUNAJI, Akshay ,  PAI, Uday ,  ROGGENBUCK, Timothy J. ,  BALUJA, Sanjeev ,  KARADI, Kalesh Panchaxari ,  ULAVI, Tejas

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：WO2022020679A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/042899

申请日：2021-07-23

Applicant: APPLIED MATERIALS, INC.

Inventor： XU, Wenjing ,  CHEN, Feng ,  HA, Tae Hong ,  TANG, Xianmin ,  CHEN, Lu ,  WU, Zhiyuan

IPC: H01L21/768 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53238

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.