Invention Application
- Patent Title: NEGATIVE HIGH VOLTAGE HOT SWITCHING CIRCUIT
- Patent Title (中): 负压高压开关电路
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Application No.: PCT/US2016/019049Application Date: 2016-02-23
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Publication No.: WO2016200446A1Publication Date: 2016-12-15
- Inventor: MOSCALUK, Gary , GEORGESCU, Bogdan , WILLIAMS, Timothy
- Applicant: CYPRESS SEMICONDUCTOR CORPORATION
- Applicant Address: 198 Champion Court San Jose, CA 94134 US
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: 198 Champion Court San Jose, CA 94134 US
- Agency: JORDAN, Christopher
- Priority: US62/174,751 20150612; US14/965,678 20151210
- Main IPC: H03K17/687
- IPC: H03K17/687 ; G11C16/02 ; G11C16/30
Abstract:
A biasing circuit includes cascoded transistors including a first transistor and a second transistor. A first gate of the first transistor is coupled to a second gate of the second transistor at a first node. The circuit also includes a voltage control circuit coupled to at least one of the first transistor or the second transistor. The voltage control circuit is configured to change a voltage level of at least one of the first transistor or the second transistor to allow voltage domain transition of an output signal in view of a change in state of an input signal without ramping a supply signal of the biasing circuit.
Information query
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