Invention Application
- Patent Title: HIGH TEMPERATURE THERMAL ALD SILICON NITRIDE FILMS
- Patent Title (中): 高温热铝硅酸盐膜
-
Application No.: PCT/US2016/047150Application Date: 2016-08-16
-
Publication No.: WO2017034855A1Publication Date: 2017-03-02
- Inventor: LU, Xinliang , LEI, Pingyan , KAO, Chien-Teh , BALSEANU, Mihaela , XIA, Li-Qun , SRIRAM, Mandyam
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, California 95054 US
- Agency: BLANKMAN, Jeffrey I.
- Priority: US62/208,262 20150821
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L21/285 ; H01L21/205
Abstract:
Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600°C and a nitrogen-containing reactant.
Information query
IPC分类:
