Invention Application
WO2017095385A1 STACKED DIE PACKAGE WITH THROUGH-MOLD THERMALLY CONDUCTIVE STRUCTURES BETWEEN A BOTTOM DIE AND A THERMALLY CONDUCTIVE MATERIAL 审中-公开
带底模和导热材料之间具有模具导热结构的堆叠式模具组件

  • Patent Title: STACKED DIE PACKAGE WITH THROUGH-MOLD THERMALLY CONDUCTIVE STRUCTURES BETWEEN A BOTTOM DIE AND A THERMALLY CONDUCTIVE MATERIAL
  • Patent Title (中): 带底模和导热材料之间具有模具导热结构的堆叠式模具组件
  • Application No.: PCT/US2015/063046
    Application Date: 2015-11-30
  • Publication No.: WO2017095385A1
    Publication Date: 2017-06-08
  • Inventor: JHA, Chandra M.LI, Eric
  • Applicant: INTEL CORPORATION
  • Applicant Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
  • Assignee: INTEL CORPORATION
  • Current Assignee: INTEL CORPORATION
  • Current Assignee Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
  • Agency: O'ROURKE, Robert B. et al.
  • Main IPC: H01L23/34
  • IPC: H01L23/34 H01L23/12
STACKED DIE PACKAGE WITH THROUGH-MOLD THERMALLY CONDUCTIVE STRUCTURES BETWEEN A BOTTOM DIE AND A THERMALLY CONDUCTIVE MATERIAL
Abstract:
An apparatus is described that includes a first semiconductor die. A second semiconductor die is stacked on the first semiconductor die. The first semiconductor die has a larger surface area than the second semiconductor die such that there exists a peripheral region of the first semiconductor die that is not covered by the second semiconductor die. The apparatus includes thermally conductive material above the second semiconductor die. The apparatus includes a compound mold between the thermally conductive materila and both the second semiconductor die and the peripheral region of the first semiconductor die. The apparatus includes a thermally conductive structure extending through the compound mold that thermally couples the peripheral region to the thermally conductive material.
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