发明申请
WO2017105414A1 EDGE TERMINATION DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER DEVICES
审中-公开
碳化硅超级结功率器件的边缘终端设计
- 专利标题： EDGE TERMINATION DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER DEVICES
- 专利标题（中）： 碳化硅超级结功率器件的边缘终端设计
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申请号： PCT/US2015/065881申请日： 2015-12-15
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公开(公告)号： WO2017105414A1公开(公告)日： 2017-06-22
- 发明人: BOLOTNIKOV, Alexander Viktorovich , LOSEE, Peter Almern , LILIENFELD, David Alan , MCMAHON, James Jay
- 申请人： GENERAL ELECTRIC COMPANY
- 申请人地址： 1 River Road Schenectady, New York 12345 US
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： 1 River Road Schenectady, New York 12345 US
- 代理机构： RARIDEN, John M. et al.
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/329 ; H01L29/06 ; H01L29/16 ; H01L29/36 ; H01L29/167
摘要：
The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to SiC super-junction (SJ) power devices. A SiC-SJ device includes a plurality of SiC semiconductor layers of a first conductivity-type, wherein a first and a second SiC semiconductor layer of the plurality of SiC semiconductor layers comprise a termination region disposed adjacent to an active region with an interface formed therebetween, wherein the termination region of the first and the second SiC semiconductor layers comprises a plurality of implanted regions of a second conductivity-type, and wherein an effective doping profile of the termination region of the first SiC semiconductor layer is different from an effective doping profile of the termination region of the second SiC semiconductor layer.
IPC分类:
