Invention Application
WO2017131894A1 MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION AND THERMAL STABILITY ENHANCEMENT LAYER
审中-公开
具有磁性隧道接合和热稳定性增强层的存储器单元
- Patent Title: MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION AND THERMAL STABILITY ENHANCEMENT LAYER
- Patent Title (中): 具有磁性隧道接合和热稳定性增强层的存储器单元
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Application No.: PCT/US2016/067444Application Date: 2016-12-19
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Publication No.: WO2017131894A1Publication Date: 2017-08-03
- Inventor: PINARBASI, Mustafa Michael , KARDASZ, Bartlomiej Adam
- Applicant: SPIN TRANSFER TECHNOLOGIES, INC.
- Applicant Address: 45500 Northport Loop West Fremont, California 94538 US
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: 45500 Northport Loop West Fremont, California 94538 US
- Agency: MILLER, Jeffrey A.
- Priority: US62/287,994 20160128; US15/157,783 20160518
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.
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