Invention Application
WO2017132299A1 SILICA CONTENT SUBSTRATE SUCH AS FOR USE HARSH ENVIRONMENT CIRCUITS AND HIGH FREQUENCY ANTENNAS
审中-公开
二氧化硅含量的基板如使用恶劣的环境电路和高频天线
- Patent Title: SILICA CONTENT SUBSTRATE SUCH AS FOR USE HARSH ENVIRONMENT CIRCUITS AND HIGH FREQUENCY ANTENNAS
- Patent Title (中): 二氧化硅含量的基板如使用恶劣的环境电路和高频天线
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Application No.: PCT/US2017/015006Application Date: 2017-01-26
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Publication No.: WO2017132299A1Publication Date: 2017-08-03
- Inventor: HAWTOF, Daniel Warren , LAL, Archit , LIN, Jen-Chieh , TROTT, Gary Richard
- Applicant: CORNING INCORPORATED
- Applicant Address: 1 Riverfront Plaza Corning, New York 14831 US
- Assignee: CORNING INCORPORATED
- Current Assignee: CORNING INCORPORATED
- Current Assignee Address: 1 Riverfront Plaza Corning, New York 14831 US
- Agency: MAGAZINER, Russell Scott
- Priority: US62/287,645 20160127
- Main IPC: H05K1/03
- IPC: H05K1/03 ; H05K1/16 ; H05K3/00
Abstract:
A high silica content substrate, such as for a device, is provided. The substrate has a high silica content and is thin. The substrate may include a surface with a topography or profile that facilitates bonding with a conductive metal layer, such as a metal layer for a circuit or antenna. The substrate may be flexible, have high temperature resistance, very low CTE, high strength and/or be non-reactive. The substrate may be suitable for use in circuits intended for use in high temperature environments, low temperature environments, reactive environments, or other harsh environments. The substrate may be suitable for high frequency antenna applications.
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