Invention Application
- Patent Title: SENSE AMPLIFIER RANDOM NOISE STRESS
- Patent Title (中): SENSE AMPLIFIER随机噪声应力
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Application No.: PCT/US2017/012756Application Date: 2017-01-09
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Publication No.: WO2017136106A1Publication Date: 2017-08-10
- Inventor: JUNG, Chulmin , AHMED, Fahad , YOON, Sei Seung , KIM, Keejong
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: ATTEN: International IP Administration 5775 Morehouse Drive San Diego, California, US 92121-1714 US
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: ATTEN: International IP Administration 5775 Morehouse Drive San Diego, California, US 92121-1714 US
- Agency: GELFOUND, Craig A. et al.
- Priority: US15/013,897 20160202
- Main IPC: G11C29/02
- IPC: G11C29/02 ; G11C29/50 ; G11C29/14 ; G11C7/02 ; G11C11/419
Abstract:
A memory includes a memory cell, one bitline coupled to the memory cell, a sense amplifier coupled to the one bitline, a timing circuit configured to enable the sense amplifier during a read operation, a control circuit configured to enable the sense amplifier independent of the timing circuit, and a pull-up circuit configured to pull up the one bitline while the sense amplifier is enabled by the control circuit. The method includes enabling a sense amplifier in a read operation by a timing circuit. The sense amplifier is coupled to at least one bitline, and the at least one bitline is coupled to a memory cell. The method further includes enabling the sense amplifier independent of the timing circuit in a second operation and pulling up the at least one bitline by a pull-up circuit while the sense amplifier is enabled in the second operation.
Information query
