A monocrystalline metal-oxide stack including a ferroelectric (FE) tunneling layer and a buffer layer is epitaxially grown on a growth substrate. A first poly crystalline metal electrode layer is deposited over the tunneling layer. A bonding material layer is further deposited over the electrode layer. The bonding material layer is then bonded to a material layer on a front or back side of a host substrate that further comprises a transistor cell. Once bonded, the growth substrate may be removed from the metal-oxide stack to complete a transfer of the metal-oxide stack from the growth substrate to the host substrate. A second poly crystalline metal electrode layer is then deposited over the exposed buffer layer, placing both electrodes in close proximity to the FE tunneling layer.