Invention Application
- Patent Title: NICKEL-TIN MICROBUMP STRUCTURES AND METHOD OF MAKING SAME
- Patent Title (中): 镍锡微结构及其制造方法
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Application No.: PCT/US2017/046745Application Date: 2017-08-14
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Publication No.: WO2018052600A1Publication Date: 2018-03-22
- Inventor: JAIN, Rahul , LEE, Kyu Oh , SCHUCKMAN, Amanda E. , CHO, Steve S.
- Applicant: INTEL CORPORATION
- Applicant Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
- Agency: BERNADICOU, Michael A. et al.
- Priority: US15/267,065 20160915
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L23/485
Abstract:
Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes nickel and tin, wherein the nickel aids in mitigating an absorption of seed layer copper. In another embodiment, the microbump has a mass fraction of tin, or a mass fraction of nickel, that is different in various regions along a height of the microbump.
Information query
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