Invention Application
- Patent Title: METHOD AND SYSTEM FOR VERTICAL POWER DEVICES
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Application No.: PCT/US2017/067686Application Date: 2017-12-20
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Publication No.: WO2018125723A1Publication Date: 2018-07-05
- Inventor: ODNOBLYUDOV, Vladimir , RISBUD, Dilip , AKTAS, Ozgur
- Applicant: QROMIS, INC.
- Applicant Address: 2306 Walsh Avenue Santa Clara, California 95051 US
- Assignee: QROMIS, INC.
- Current Assignee: QROMIS, INC.
- Current Assignee Address: 2306 Walsh Avenue Santa Clara, California 95051 US
- Agency: LIU, Rong et al.
- Priority: US62/439,860 20161228; US15/847,716 20171219
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/45 ; H01L29/47 ; H01L29/861
Abstract:
A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer. The method further includes forming a Schottky diode coupled to the engineered substrate. The Schottky diode has a top surface and a bottom surface, the bottom surface is coupled to the substantially single crystalline silicon layer. The method further includes forming a Schottky contact coupled to the top surface of the Schottky diode, forming a metal plating coupled to the Schottky contact, removing the engineered substrate to expose the bottom surface of the Schottky diode, and forming an ohmic contact on the bottom surface of the Schottky diode.
Information query
IPC分类:
