公开(公告)号：WO2018125723A1

公开(公告)日：2018-07-05

申请号：PCT/US2017/067686

申请日：2017-12-20

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  RISBUD, Dilip ,  AKTAS, Ozgur

IPC: H01L29/872 ,  H01L29/45 ,  H01L29/47 ,  H01L29/861

Abstract: A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer. The method further includes forming a Schottky diode coupled to the engineered substrate. The Schottky diode has a top surface and a bottom surface, the bottom surface is coupled to the substantially single crystalline silicon layer. The method further includes forming a Schottky contact coupled to the top surface of the Schottky diode, forming a metal plating coupled to the Schottky contact, removing the engineered substrate to expose the bottom surface of the Schottky diode, and forming an ohmic contact on the bottom surface of the Schottky diode.

公开(公告)号：WO2018156357A1

公开(公告)日：2018-08-30

申请号：PCT/US2018/017405

申请日：2018-02-08

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  BASCERI, Cem ,  AKTAS, Ozgur

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C30B29/06 ,  C30B29/40 ,  C30B29/68

Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.

公开(公告)号：WO2019157384A1

公开(公告)日：2019-08-15

申请号：PCT/US2019/017358

申请日：2019-02-08

Applicant: QROMIS, INC.

Inventor： AKTAS, Ozgur ,  ODNOBLYUDOV, Vladimir ,  BASCERI, Cem

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  C03B23/02

Abstract: A method of forming doped regions by diffusion in gallium nitride materials includes providing a substrate structure including a gallium nitride layer and forming a mask on the gallium nitride layer. The mask exposes one or more portions of a top surface of the gallium nitride layer. The method also includes depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer and concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions. The magnesium-containing gallium nitride layer provides a source of magnesium dopants. The method further includes removing the magnesium-containing gallium nitride layer and removing the mask.

公开(公告)号：WO2019113045A1

公开(公告)日：2019-06-13

申请号：PCT/US2018/063817

申请日：2018-12-04

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  RISBUD, Dilip ,  AKTAS, Ozgur ,  BASCERI, Cem

IPC: H01L21/02 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78

Abstract: A method of forming a plurality of devices on an engineered substrate structure includes forming an engineered substrate by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core with a first adhesion shell, encapsulating the first adhesion shell with a barrier layer, forming a bonding layer on the barrier layer, and forming a substantially single crystal layer coupled to the bonding layer. The method further comprises forming a buffer layer coupled to the substantially single crystal layer, forming one or more epitaxial III-V layers on the buffer layer according to requirements associated with the plurality of devices, and forming the plurality of devices on the substrate by removing a portion of the one or more epitaxial III-V layers disposed between the plurality of devices and removing a portion of the buffer layer disposed between the plurality of devices.

公开(公告)号：WO2019090212A1

公开(公告)日：2019-05-09

申请号：PCT/US2018/059181

申请日：2018-11-05

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  BASCERI, Cem ,  AKTAS, Ozgur ,  FARRENS, Shari

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/30 ,  H01L21/46 ,  H01L21/683

Abstract: An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.

公开(公告)号：WO2018136278A1

公开(公告)日：2018-07-26

申请号：PCT/US2018/013206

申请日：2018-01-10

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  LESTER, Steve ,  AKTAS, Ozgur

IPC: C30B29/40 ,  C30B29/68

Abstract: A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.

公开(公告)号：WO2018106698A1

公开(公告)日：2018-06-14

申请号：PCT/US2017/064726

申请日：2017-12-05

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  AKTAS, Ozgur

IPC: H01L29/20 ,  H01L29/778

Abstract: A method of forming a semiconductor device includes providing an engineered substrate, forming a gallium nitride layer coupled to the engineered substrate, forming a channel region coupled to the gallium nitride layer by forming an aluminum gallium nitride barrier layer on the front surface of the gallium nitride layer, forming a gate dielectric layer coupled to the aluminum gallium nitride barrier layer in the central portion of the channel region, forming a gate contact coupled to the gate dielectric layer, forming a source contact at the first end of the channel region, forming a via at the second end of the channel region, filling the via with a conductive material, forming a drain contact coupled to the via, removing the engineered substrate to expose the back surface of the epitaxial gallium nitride layer, and forming a drain pad on the back surface of the epitaxial gallium nitride layer.

公开(公告)号：WO2022081749A1

公开(公告)日：2022-04-21

申请号：PCT/US2021/054835

申请日：2021-10-13

Applicant: QROMIS, INC. ,  AKTAS, Ogzur

Inventor： ODNOBLYUDOV, Vladimir ,  BASCERI, Cem

IPC: H01L23/34

Abstract: A monolithic microwave integrated circuit (MMIC) system includes a growth substrate, a device layer coupled to the growth substrate, a plurality of MMIC device elements coupled to the device layer, and a plurality of metallization structures coupled to the plurality of MMIC device elements. The MMIC system also includes a carrier substrate coupled to the plurality of metallization structures and a cooling structure coupled to the carrier substrate.

公开(公告)号：WO2021163175A1

公开(公告)日：2021-08-19

申请号：PCT/US2021/017434

申请日：2021-02-10

Applicant: QROMIS, INC.

Inventor： AKTAS, Ozgur ,  ODNOBLYUDOV, Vladimir ,  BASCERI, Cem

IPC: H01L29/20 ,  H01L21/265 ,  H01L21/32 ,  H01L21/324

Abstract: A method of forming a doped gallium nitride (GaN) layer includes providing a substrate structure, including a gallium nitride layer, forming a dopant source layer over the gallium nitride layer, and depositing a capping structure over the dopant source layer. The method also includes annealing the substrate structure to diffuse dopants into the gallium nitride layer, removing the capping structure and the dopant source layer, and activating the diffused dopants.

公开(公告)号：WO2018183374A1

公开(公告)日：2018-10-04

申请号：PCT/US2018/024629

申请日：2018-03-27

Applicant: QROMIS, INC.

Inventor： ODNOBLYUDOV, Vladimir ,  AKTAS, Ozgur

IPC: H01L29/872 ,  H01L29/45 ,  H01L29/47

Abstract: A vertical Schottky diode includes an ohmic contact, a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration, and a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration. The vertical Schottky diode further includes a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer, and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region.