Invention Application
- Patent Title: PRECESSIONAL SPIN CURRENT STRUCTURE WITH HIGH IN-PLANE MAGNETIZATION FOR MRAM
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Application No.: PCT/US2018/014641Application Date: 2018-01-22
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Publication No.: WO2018160285A1Publication Date: 2018-09-07
- Inventor: PINARBASI, Mustafa Michael , KARDASZ, Bartlomiej Adam
- Applicant: SPIN TRANSFER TECHNOLOGIES, INC.
- Applicant Address: 45500 Northport Loop West Fremont, California 94538 US
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: 45500 Northport Loop West Fremont, California 94538 US
- Agency: MILLER, Jeffrey A.
- Priority: US15/445,260 20170228
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer is constructed with a material having a face centered cubic crystal structure, such as permalloy.
Information query
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