Invention Application
- Patent Title: ELECTROCHEMICAL DOPING OF THIN METAL LAYERS EMPLOYING UNDERPOTENTIAL DEPOSITION AND THERMAL TREATMENT
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Application No.: PCT/US2018/049815Application Date: 2018-09-07
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Publication No.: WO2019051138A1Publication Date: 2019-03-14
- Inventor: VENKATRAMAN, Kailash , DORDI, Yezdi , JOI, Aniruddha
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: 4650 Cushing Parkway Fremont, CA 94538 US
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: 4650 Cushing Parkway Fremont, CA 94538 US
- Agency: LEE, David
- Priority: US15/701,265 20170911
- Main IPC: C23C18/16
- IPC: C23C18/16 ; C23C18/54 ; C25D5/18 ; C25D5/50 ; C25D21/12 ; C25D5/10 ; H01L21/768 ; H01L21/288
Abstract:
A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.
Information query
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