公开(公告)号：WO2019036234A1

公开(公告)日：2019-02-21

申请号：PCT/US2018/045591

申请日：2018-08-07

Applicant: LAM RESEARCH CORPORATION

Inventor： JOI, Aniruddha ,  VENKATRAMAN, Kailash ,  DORDI, Yezdi

IPC: C23C18/54 ,  C23C18/52

Abstract: A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

公开(公告)号：WO2021022292A1

公开(公告)日：2021-02-04

申请号：PCT/US2020/070303

申请日：2020-07-22

Applicant: LAM RESEARCH CORPORATION

Inventor： BANIK II, Stephen, J. ,  BLICKENSDERFER, Jacob, Kurtis ,  VENKATRAMAN, Kailash ,  OBERST, Justin ,  CHUA, Lee, Peng ,  BUCKALEW, Bryan, L. ,  MAYER, Steven, T.

IPC: H01L23/00 ,  H01L23/49

Abstract: A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.

公开(公告)号：WO2019051138A1

公开(公告)日：2019-03-14

申请号：PCT/US2018/049815

申请日：2018-09-07

Applicant: LAM RESEARCH CORPORATION

Inventor： VENKATRAMAN, Kailash ,  DORDI, Yezdi ,  JOI, Aniruddha

IPC: C23C18/16 ,  C23C18/54 ,  C25D5/18 ,  C25D5/50 ,  C25D21/12 ,  C25D5/10 ,  H01L21/768 ,  H01L21/288

Abstract: A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.