Invention Application
- Patent Title: PROCESS FOR PREPARING SINGLE-CRYSTAL THIN FILMS
-
Application No.: PCT/EP2019/073877Application Date: 2019-09-06
-
Publication No.: WO2020053102A1Publication Date: 2020-03-19
- Inventor: CHATAIN, Dominique , OZEROV, Igor , COURTOIS, Blandine , RANGUIS, Alain
- Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE D'AIX-MARSEILLE
- Applicant Address: 3 rue Michel Ange 75016 PARIS FR
- Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE D'AIX-MARSEILLE
- Current Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE D'AIX-MARSEILLE
- Current Assignee Address: 3 rue Michel Ange 75016 PARIS FR
- Agency: CABINET BECKER ET ASSOCIES
- Priority: EP18306183.7 20180910
- Main IPC: C30B23/02
- IPC: C30B23/02 ; C30B25/18 ; C30B29/02 ; C30B29/52
Abstract:
The invention relates to a process for preparing single-crystal thin films of pure metals or alloys, by deposition and growth of grains on a (0001) sapphire having a miscut comprised between 0.2° and 5°, and oriented towards a specific plane. It also relates to a single-crystal thin film obtainable by such a process and uses thereof.
Information query