Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1 a R1 b L1 c , where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a ≥ 1, b ≥ 1, and c ≥ 1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.