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公开(公告)号：WO2021072042A1
公开(公告)日：2021-04-15
申请号：PCT/US2020/054730
申请日：2020-10-08
Applicant: LAM RESEARCH CORPORATION
Inventor： WEIDMAN, Timothy William , NARDI, Katie Lynn , DICTUS, Dries , KAM, Benjamin , WU, Chenghao , HANSEN, Eric Calvin , KENANE, Nizan , GU, Kevin Li
Abstract: The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.
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公开(公告)号：WO2022125388A1
公开(公告)日：2022-06-16
申请号：PCT/US2021/061751
申请日：2021-12-03
Applicant: LAM RESEARCH CORPORATION [US]/[US]
Inventor： DICTUS, Dries , WU, Chenghao , HANSEN, Eric Calvin , WEIDMAN, Timothy William
Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.
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Patent Agency Ranking
公开(公告)号：WO2022173632A1
公开(公告)日：2022-08-18
申请号：PCT/US2022/014984
申请日：2022-02-02
Applicant: LAM RESEARCH CORPORATION
Abstract: The present disclosure relates to a composition formed with an organometallic precursor and a dopant precursor, as well as methods for forming and employing such compositions. In particular embodiments, the dopant precursor provides an element into the composition to increase quantum efficiency, such as by increasing radiation absorption and/or by increasing secondary electron emission or secondary electron yield (SEY) within the composition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.
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公开(公告)号：WO2022016123A1
公开(公告)日：2022-01-20
申请号：PCT/US2021/042103
申请日：2021-07-16
Applicant: LAM RESEARCH CORPORATION
Inventor： HANSEN, Eric Calvin , WEIDMAN, Timothy, William , WU, Chenghao , LIN, Qinghuang , BLAKENEY, Kyle, Jordan
Abstract: The present disclosure relates to a film formed with a precursor and an organic co-reactant, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the carbon content within the film can be tuned by decoupling the sources of the radiation-sensitive metal elements and the radiation-sensitive organic moieties during deposition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.
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公开(公告)号：WO2022182473A1
公开(公告)日：2022-09-01
申请号：PCT/US2022/014281
申请日：2022-01-28
Applicant: LAM RESEARCH CORPORATION
Inventor： WEIDMAN, Timothy William , HANSEN, Eric Calvin , WU, Chenghao
Abstract: The present disclosure relates to a composition formed with a precursor including a C1-4 haloaliphatic or C1-4 aliphatic group or vinyl group (-CH=CH2) and other unsaturated substituents, as well as methods for forming and employing such compositions. In particular embodiments, the haloaliphatic group is a C1-2 haloalkyl group, which in turn provides a resist film having enhanced radiation absorptivity and/or minimal film shrinkage (e.g., upon radiation exposure and/or post-exposure bake). In other embodiments, the aliphatic group is a C1-2 alkyl or vinyl group and other unsaturated substituents, which can be dry deposited. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.
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公开(公告)号：WO2022016128A1
公开(公告)日：2022-01-20
申请号：PCT/US2021/042108
申请日：2021-07-16
Applicant: LAM RESEARCH CORPORATION
Inventor： HANSEN, Eric Calvin , WEIDMAN, Timothy William , WU, Chenghao , LIN, Qinghuang , BLAKENEY, Kyle Jordan , LAVOIE, Adrien , KANAKASABAPATHY, Sivananda Krishnan , TAN, Samantha S.H. , WISE, Richard , PAN, Yang , LEE, Younghee , NARDI, Katie Lynn , GU, Kevin Li , VOLOSSKIY, Boris
Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.
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7.发明申请
公开(公告)号：WO2020264557A1
公开(公告)日：2020-12-30
申请号：PCT/US2020/070172
申请日：2020-06-24
Applicant: LAM RESEARCH CORPORATION
Inventor： WEIDMAN, Timothy William , GU, Kevin Li , NARDI, Katie Lynn , WU, Chenghao , VOLOSSKIY, Boris , HANSEN, Eric Calvin
Abstract: Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1 a R1 b L1 c , where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a ≥ 1, b ≥ 1, and c ≥ 1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.
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