Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 atomic percent (at%) to about 35 at%, a nitrogen concentration of about 40 at% to about 75 at%, and a hydrogen concentration of about 10 at% to about 35 at%. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.