公开(公告)号：WO2017123552A1

公开(公告)日：2017-07-20

申请号：PCT/US2017/012872

申请日：2017-01-10

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Hao-Chien ,  YIM, Dong-Kil ,  WON, Tae Kyung ,  ZHANG, Xuena ,  SUNG, Won Ho ,  LIM, Rodney Shunleong

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L29/66 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/7869

Abstract: Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

Abstract translation: 本公开的实施例总体上涉及用于形成具有金属氧化物层的TFT的方法。 该方法可以包括形成金属氧化物层并用含氟气体或等离子体处理金属氧化物层。 金属氧化物层的氟处理有助于填充金属氧化物沟道层中的氧空位，导致更稳定的TFT并防止TFT中的负阈值电压。

公开(公告)号：WO2021040860A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/038595

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： LIM, Rodney Shunleong ,  KIM, Jung Bae ,  WANG, Jiarui ,  CUI, Yi ,  YIM, Dong Kil ,  CHOI, Soo Young

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/768

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 atomic percent (at%) to about 35 at%, a nitrogen concentration of about 40 at% to about 75 at%, and a hydrogen concentration of about 10 at% to about 35 at%. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

公开(公告)号：WO2018164806A1

公开(公告)日：2018-09-13

申请号：PCT/US2018/017416

申请日：2018-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LIM, Rodney Shunleong ,  YIM, Dong-Kil

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66

Abstract: Embodiments of the disclosure generally provide methods of forming thin film transistor (TFT) device structure with good interface management between active layers of a metal electrode layer and/or source/drain electrode layers and a nearby insulating material so as to provide high electrical performance devices, or for other suitable display applications. In one embodiment, a thin film transistor structure includes a contact region formed between fluorine-doped source and drain regions disposed on a substrate, a gate insulating layer disposed on the contact region, and a metal electrode layer disposed on the gate insulator layer.

公开(公告)号：WO2021228359A1

公开(公告)日：2021-11-18

申请号：PCT/EP2020/063055

申请日：2020-05-11

Applicant: APPLIED MATERIALS, INC. ,  TSAI, Yun-Chu ,  YIM, Dong Kil ,  LIM, Rodney Shunleong ,  GRILLMAYER, Jürgen ,  KIM, Jung Bae ,  BENDER, Marcus

Inventor： TSAI, Yun-Chu ,  YIM, Dong Kil ,  LIM, Rodney Shunleong ,  GRILLMAYER, Jürgen ,  KIM, Jung Bae ,  BENDER, Marcus

IPC: C23C14/56 ,  C23C14/34 ,  C23C14/08 ,  H01J37/34 ,  H01L29/00

Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

公开(公告)号：WO2016099437A1

公开(公告)日：2016-06-23

申请号：PCT/US2014/070264

申请日：2014-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： LIM, Rodney Shunleong ,  YIM, Dong-Kil ,  YOU, Harvey

IPC: H01L21/02 ,  C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  H01L21/314

CPC classification number: H01L21/02175 ,  C23C14/0042 ,  C23C14/0057 ,  C23C14/0676 ,  C23C14/086 ,  C23C14/352 ,  H01L21/02266

Abstract: A method for layer deposition over a substrate is provided. The method includes conditioning a sputter target in metallic mode under a first process atmosphere, wherein a target material of the sputter target includes a metal; and depositing a metal oxynitride layer over the substrate in a reactive deposition process under a second process atmosphere.

Abstract translation: 提供了一种用于衬底上的层沉积的方法。 该方法包括在第一工艺气氛下以金属模式调节溅射靶，其中溅射靶的目标材料包括金属; 以及在第二工艺气氛下的反应沉积工艺中在所述衬底上沉积金属氧氮化物层。

公开(公告)号：WO2014159033A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/021611

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： YIM, Dong-Kil ,  LIM, Rodney Shunleong ,  SCHEER, Evelyn ,  WON, Tae Kyung ,  CHOI, Soo Young ,  YOU, Harvey

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention generally relates to TFTs and methods for fabricating TFTs. When multiple layers are used for the semiconductor material in a TFT, a negative Vth shift may result. By exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereover, the negative Vth shift may be negated.

Abstract translation: 本发明一般涉及TFT和TFT的制造方法。 当TFT中的半导体材料使用多层时，可能产生负的Vth偏移。 通过将半导体层暴露于含氧等离子体和/或在其上形成蚀刻停止层，可以否定负的Vth偏移。