- 专利标题： SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING SAME
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申请号： PCT/CA2022/050403申请日： 2022-03-17
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公开(公告)号： WO2022193020A1公开(公告)日： 2022-09-22
- 发明人: ZHAO, Songrui , ZHANG, Qihua
- 申请人： THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY
- 申请人地址： Office of Sponsored Research
- 专利权人： THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY
- 当前专利权人： THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY
- 当前专利权人地址： Office of Sponsored Research
- 代理机构： NORTON ROSE FULBRIGHT CANADA LLP / S.E.N.C.R.L., S.R.L.
- 优先权： US63/162,111 2021-03-17
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; B82Y30/00 ; B82Y40/00 ; H01L21/00
摘要：
There is described a substrate for a semiconductor device. The substrate generally has a semiconductor wafer; an intermediate nanowire layer having a plurality of nanowires each having in succession a base portion mounted to the semiconductor wafer, an elongated body portion extending away from the semiconductor wafer, and a tip portion; and a buffer layer of aluminum nitride being made integral to the tip portions of the plurality of nanowires.
IPC分类:
