Invention Application
- Patent Title: VAN DER WAALS CAPACITOR AND QUBIT USING SAME
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Application No.: PCT/US2022/019199Application Date: 2022-03-07
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Publication No.: WO2022197482A1Publication Date: 2022-09-22
- Inventor: WARE, Matthew Elliot , RAJENDRAN, Anjaly Thekkevilayil , RIBEILL, Guilhem Jean Antoine , OHKI, Thomas Akira , HONE, James Curtis , GUSTAFSSON, Martin , GOVIA, Luke , FONG, Kin Chung , ANTONY, Abhinandan
- Applicant: RAYTHEON BBN TECHNOLOGIES, CORP. , COLUMBIA UNIVERSITY
- Applicant Address: 10 Moulton Street; 116th and Broadway
- Assignee: RAYTHEON BBN TECHNOLOGIES, CORP.,COLUMBIA UNIVERSITY
- Current Assignee: RAYTHEON BBN TECHNOLOGIES, CORP.,COLUMBIA UNIVERSITY
- Current Assignee Address: 10 Moulton Street; 116th and Broadway
- Agency: TABANDEH, Raymond R.
- Priority: US17/686,832 2022-03-04
- Main IPC: G06N10/00
- IPC: G06N10/00 ; H01L27/18 ; H01L39/22
Abstract:
A van der Waals capacitor and a qubit constructed with such a capacitor. In some embodiments, the capacitor includes a first conductive layer; an insulating layer, on the first conductive layer; and a second conductive layer on the insulating layer. The first conductive layer may be composed of one or more layers of a first van der Waals material, the insulating layer may be composed of one or more layers of a second van der Waals material, and the second conductive layer may be composed of one or more layers of a third van der Waals material.
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