Invention Application
- Patent Title: METHOD FOR DIGITAL FORMATION OF 2D MATERIALS STRUCTURES, APPLICATIONS THEREOF AND A SYSTEM
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Application No.: PCT/GR2022/000025Application Date: 2022-04-27
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Publication No.: WO2022248893A1Publication Date: 2022-12-01
- Inventor: PAPAZOGLOU, Symeon , ZACHARATOS, Filimon , LOGOTHETI, Adamantia , PESQUERA, Amaia , ZURUTUZA, Amaia , NAVEH, Doron
- Applicant: NATIONAL TECHNICAL UNIVERSITY OF ATHENS , ZERGIOTI, Ioanna , BAR-ILAN UNIVERSITY , GRAPHENEA SEMICONDUCTOR S.L.U.
- Applicant Address: Heroon Polytechniou 9; 6 Mavragani Street; Bar-Ilan University Campus; PS Mikeletegi 83
- Assignee: NATIONAL TECHNICAL UNIVERSITY OF ATHENS,ZERGIOTI, Ioanna,BAR-ILAN UNIVERSITY,GRAPHENEA SEMICONDUCTOR S.L.U.
- Current Assignee: NATIONAL TECHNICAL UNIVERSITY OF ATHENS,ZERGIOTI, Ioanna,BAR-ILAN UNIVERSITY,GRAPHENEA SEMICONDUCTOR S.L.U.
- Current Assignee Address: Heroon Polytechniou 9; 6 Mavragani Street; Bar-Ilan University Campus; PS Mikeletegi 83
- Agency: ARHONDULA PAPAPANAGIOTOU & PARTNERS LAW FIRM
- Priority: US17/725,365 2022-04-20
- Main IPC: C23C14/04
- IPC: C23C14/04 ; C23C14/06 ; C23C14/12 ; C23C14/58 ; C23C14/28 ; C01B32/184 ; B82Y30/00 ; B82Y40/00 ; H01L29/16 ; H01L21/02 ; B82Y10/00 ; G06F3/00 ; H01L29/66 ; H05K3/12 ; H01L23/00 ; B41J2/005 ; B41M1/26 ; B41M5/035 ; B41M7/00 ; B23K26/00 ; B41J2/00
Abstract:
A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi2S3-xSx, MoS2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.
Information query
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