Disclosed herein are radiative heating systems and methods for use with dry development processes. Such systems and methods may, in some instances, allow for volatile halides that may be trapped on the surface of a wafer after dry development processing has completed to be driven out of the wafer through radiative heating thereof. Such systems and methods may, in some instances, be provided in an in-situ context in which the wafers being heated are radiatively heated within the same chamber as the dry development process is performed. In other contexts, such radiative heating may be performed in other locations, e.g., as the wafer transits from the processing chamber to another chamber or in another chamber entirely.